BondLib.Spice.Utilities.PMOSint

# .BondLib.Spice.Utilities.PMOSint

Spice-style internal PMOS transistor in bond graph technology

## Information

The Spice-style internal p-channel MOSFET model contains the non-linear current source, the two junction diodes (including the junctions capacitances), as well as leakage conductances everywhere to keep the model together.

    Parameters:

     Level:   MOSFET modeling level (default value = 3)
                Level=0: Static injection model
                Level=1: Shichman-Hodges model
                Level=2: Grove-Frohman model
                Level=3: Empirical model
                Level=4: Simplified Grove-Frohman model

     Tnom:    Reference temperature (default value = 300.15 K)

     VT0:     Zero-bias threshold voltage (default value = 0 Volt)
                VT0 < 0 for enhancement MOSFET
                VT0 > 0 for depletion MOSFET

     KP:      Transconductance parameter at reference temperature (default value = 0 Amp/Volt2)

     GAMMA:   Body-effect parameter (default value = Volt0.5)

     PHI:     Surface inversion potential at reference temperature (default value = 0 Volt)

     LAMBDA:  Channel length modulation  (default value = 0 1/Volt)

     TOX:     Thin oxide thickness (default value = 1e-7 m)

     COX:     Specific capacitance of SiO2 (default value = 0 F/m2)

     NSUB:    Substrate doping (default value = 0 1/m3)

     NSS:     Surface state density (default value = 0 1/m2)

     NFS:     Surface fast state density (default value = 0 1/m2)

     NEFF:    Total channel charge coefficient (default value = 1)

     XJ:      Metallurgical junction depth (default value = 0 m)

     L:       Channel length (default value = 1e-4 m)

     W:       Channel width (default value = 1e-4 m)

     LD:      Lateral diffusion (default value = 0 m)

     AD:      Drain diffusion area (default value = 0 m2)

     PD:      Drain perimeter width (default value = 0 m)

     AS:      Source diffusion area (default value = 0 m2)

     PS:      Source perimeter width (default value = 0 m)

     XD:      Depletion factor (default value = 0 m/Volt0.5)

     TPG:     Type of gate material (default value = 1)

     U0:      Surface mobility at reference temperature (default value = 0 m2/(V*s))

     UCRIT:   Critical electric field for mobility (default value = 1e6 V/m)

     UEXP:    Exponential coefficient for mobility (default value = 0)

     UTRA:    Transverse field coefficient (default value = 0)

     VMAX:    Maximum drift velocity of carriers (default value = 0 m/s)
                VMAX = 0: Frohman-Grove model of drain current computation
                VMAX > 0: Baum-Beneking model of drain current computation

     ECRIT:   Critical electric field for pinch-off (default value = 0 V/m) Levels 2,3

     XQC:     Coefficient of channel charge share (default value = 0) Levels 2,3
                XQC <= 0.5: Ward-Dutton model of gate capacitance computation
                XQC >  0.5: Meyer model of gate capacitance computation

     DELTA:   Width effect on threshold voltage (default value = 0)

     KAPPA:   Saturation field factor (default value = 0.2)

     ETA:     Static feedback on threshold voltage (default value = 0)

     THETA:   Mobility modulation (default value = 0 1/Volt)

     VBP:     Gate to channel critical voltage (default value = 0 Volt)

     ISD:     Drain junction saturation current at reference temperature (default value = 0 Amp)

     ISS:     Source junction saturation current at reference temperature (default value = 0 Amp)

     PB:      Built-in potential at reference temperature (default value = 0.8 Volt)

     CJ:      Zero-bias bulk capacitance per square meter at reference temperature (default value = 1e-4 F/m2)

     MJ:      Bulk junction grading coefficient (default value = 0.33)

     CJSW:    Zero-bias perimeter capacitance per meter at reference temperature (default value = 1e-9 F/m)

     MJSW:    Perimeter capacitance grading coefficient (default value = 0.33)

     FC:      Forward-bias depletion capacitance coefficient (default value = 0.5)

     GminDC:  Leakage conductance (default value = 1e-12 mho)

     EG:      Energy gap for temperature effect on saturation current (default value = 1.11 Volt)

     EMin:    if x < EMin, the exp(x) function is linearized (default value = -100)

     EMax:    if x > EMax, the exp(x) function is linearized (default value = 40)

References:

1. Cellier, F.E. (1991), Continuous System Modeling, Springer-Verlag, New York.
2. Massobrio, G. and P. Antognetti (1993), Semiconductor Device Modeling with Spice, 2nd edition, McGraw Hill, New York.

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